Apparatus, method, and system for adaptive compensation of reverse temperature dependence

ABSTRACT

Described herein are an apparatus, method, and system for adaptive compensation for reverse temperature dependence in a processor. The apparatus comprises: a first sensor to determine operating temperature of a processor; a second sensor to determine behavior of the processor; and a control unit to determine a frequency of a clock signal for the processor and a power supply level for the processor according to the determined operating temperature and behavior of the processor, wherein the control unit to increase the power supply level from an existing power supply level, and/or reduce frequency of the clock signal from an existing frequency of the clock signal when the operating temperature is in a region of reverse temperature dependence (RTD).

RELATED CASES

This application is a divisional of U.S. patent application Ser. No.13/994,026 filed Jun. 13, 2013, titled “APPARATUS, METHOD, AND SYSTEMFOR ADAPTIVE COMPENSATION OF REVERSE TEMPERATURE DEPENDENCE,” whichclaims the benefit of priority of International Patent Application No.PCT/US2011/066465 filed Dec. 21, 2011, titled “APPARATUS, METHOD, ANDSYSTEM FOR ADAPTIVE COMPENSATION OF REVERSE TEMPERATURE DEPENDENCE,”both of which are incorporated by reference in its entirety.

FIELD OF THE INVENTION

Embodiments of the invention relate generally to the field ofprocessors. More particularly, embodiments of the invention relate to anapparatus, method, and system for adaptive compensation of reversetemperature dependence (RTD) in a processor.

BACKGROUND

CMOS circuits exhibit two temperature dependence regions as a functionof the operating voltage. These two temperature dependence regions areNormal Temperature Dependence (NTD) region and Reverse TemperatureDependence (RTD) region. In the NTD region, transistor drive currentdecreases with increasing temperature. In the RTD region, transistordrive current increases with higher temperatures.

Generally, NTD effects are observed at high operating voltages and RTDeffects are observed at low operating voltages, with a temperatureinsensitive supply voltage (Vins) separating these two regions. FIG. 1is a plot 100 showing NTD 102 and RTD 103 regions for a processor withVins 101 separating the two regions. The x-axis of the plot 100 isprocessor frequency while the y-axis of the plot 100 is supply voltageto the processor. When the processor operates at Vins 101, thetransistor drive current in the processor is insensitive to temperaturechanges.

Effects of RTD are becoming more pronounced with transistor scaling tosmaller geometries. For example, High-K/Metal Gate (HK/MG) transistordevices exhibit a higher Vins (and therefore a more pronounced RTDeffect) due to stronger threshold voltage temperature dependence,compared to transistor devices using the poly-silicon gate and siliconoxide technology. In addition, since most processors operate at lowervoltages (close to VCCmin, which is the lowest operating voltage level)to save power, the processors will operate most of the time in the RTDregion. Since speed of transistors in a processor gets slower at lowertemperatures in the RTD region, data paths in the processor may violatetiming specifications causing the processor operations to becomeunreliable.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments of the invention will be understood more fully from thedetailed description given below and from the accompanying drawings ofvarious embodiments of the invention, which, however, should not betaken to limit the invention to the specific embodiments, but are forexplanation and understanding only.

FIG. 1 is a plot showing normal temperature dependence (NTD) and reversetemperature dependence (RTD) regions for a processor.

FIG. 2 is a processor with logic units for adaptively compensating RTDeffects, according to one embodiment of the invention.

FIG. 3 is a processor with multiple hardware processing cores and withlogic units for adaptively compensating RTD effects, according to oneembodiment of the invention.

FIG. 4 is a plot showing NTD and RTD regions with options for adaptivelycompensating RTD effects, according to one embodiment of the invention.

FIG. 5 is a method flowchart for adaptively compensating RTD effects,according to one embodiment of the invention.

FIG. 6 is a replica ring oscillator for sensing the behavior of theprocessor for adaptively compensating RTD effects, according to oneembodiment of the invention.

FIG. 7 is a method flowchart for sensing the behavior of the processorvia the replica ring oscillator for adaptively compensating RTD effects,according to one embodiment of the invention.

FIG. 8 is an in-situ timing error warning sensor for sensing thebehavior of the processor for adaptively compensating RTD effects,according to one embodiment of the invention.

FIG. 9 is a method flowchart for sensing the behavior of the processorvia the In-situ timing error warning sensor for adaptively compensatingRTD effects, according to one embodiment of the invention.

FIG. 10 is a system-level diagram of a smart device comprising aprocessor which is operable to adaptively compensate RTD effects,according to one embodiment of the invention.

DETAILED DESCRIPTION

Embodiments of the invention relate to an apparatus, method, and systemfor adaptive compensation of reverse temperature dependence (RTD)effects in a processor. Since transistors are getting slower at lowertemperatures in the RTD region, to operate the processor reliably eitherthe frequency (at the same power supply voltage) can be lowered or thesupply voltage (at the same frequency) can be raised, according to oneembodiment of the invention. In one embodiment, processor supply voltageis raised, when the processor operates at lower temperatures, by a PowerControl Unit (PCU)—an on-die micro-controller that monitors operatingtemperature and determines the operating voltage and frequency for theentire chip.

The voltage correction coefficient may be the same for all parts (alsocalled processor dies) and does not take into account the part-to-partvariability (each part has a different temperature and voltage behaviordue to voltage threshold Vt variations). The higher operating supplyvoltage causes increased active and leakage power when the processor isin a low activity condition. In one embodiment, the processor comprisesa first sensor to determine operating temperature of a processor. Forexample, the first sensor is a temperature sensor. In one embodiment,the processor further comprises a second sensor (e.g., replicaoscillator, and/or in-situ warning sensor) to determine behavior of theprocessor; and a control unit to determine a frequency of a clock signalfor the processor and a power supply level for the processor accordingto the determined operating temperature and behavior of the processor.In such an embodiment, the control unit is operable to: increase thepower supply level from an existing power supply level; and reducefrequency of the clock signal from an existing frequency of the clocksignal when the operating temperature of the processor is determined tobe in a region of RTD.

The technical effects of the embodiments herein are many, and includeadaptively compensating for RTD effects in the processor. For example,the processor can now operate at VccMin (lowest operating supply voltagelevel) without degrading performance caused by RTD. By using behaviorsensors in the processor, the processor can adaptively predict whetherthe RTD effects are adverse enough to require compensation withoutcausing the processor to become operationally unreliable. The abovementioned technical effects are not limiting. Other technical effectsare contemplated by the embodiments discussed herein.

In the following description, numerous details are discussed to providea more thorough explanation of embodiments of the present invention. Itwill be apparent, however, to one skilled in the art, that embodimentsof the present invention may be practiced without these specificdetails. In other instances, well-known structures and devices are shownin block diagram form, rather than in detail, in order to avoidobscuring embodiments of the present invention.

Note that in the corresponding drawings of the embodiments, signals arerepresented with lines. Some lines may be thicker, to indicate moreconstituent signal paths, and/or have arrows at one or more ends, toindicate primary information flow direction. Such indications are notintended to be limiting. Rather, the lines are used in connection withone or more exemplary embodiments to facilitate easier understanding ofa circuit or a logical unit. Any represented signal, as dictated bydesign needs or preferences, may actually comprise one or more signalsthat may travel in either direction and may be implemented with anysuitable type of signal scheme.

In the following description and claims, the term “coupled” and itsderivatives may be used. The term “coupled” herein refers to two or moreelements which are in direct contact (physically, electrically,magnetically, optically, etc.). The term “coupled” herein may also referto two or more elements that are not in direct contact with each other,but still cooperate or interact with each other.

As used herein, unless otherwise specified the use of the ordinaladjectives “first,” “second,” and “third,” etc., to describe a commonobject, merely indicate that different instances of like objects arebeing referred to, and are not intended to imply that the objects sodescribed must be in a given sequence, either temporally, spatially, inranking or in any other manner.

For purposes of this application, the transistors described in thisapplication are metal oxide semiconductor (MOS) transistors, whichinclude drain, source, and gate terminals. However, those skilled in theart will appreciate that other transistors may be used without departingfrom the scope of the invention.

The term “adaptively” herein generally refers to continuous and regularcompensation of RTD effects by logic and circuits discussed herein whena circuit, for example a processor, enters the RTD region.

FIG. 2 is a processor 200 with logic units for adaptively compensatingRTD effects in the processor 200, according to one embodiment of theinvention. In one embodiment, the processor 200 comprises a first sensor202 and a second sensor 203 coupled to a processing core 201. Theprocessing core 201 includes logic units such as, floating point unit,integer unit, register file, etc., and any other logic unit to processcomputer executable instructions.

In one embodiment, the first sensor 202 is a temperature sensor and thesecond sensor 203 is a behavior sensor. In one embodiment, the firstsensor 202 comprises local and/or remote temperature sensors scatteredat various locations in the processor core 201 to sense temperature ofthe processor core 201. In one embodiment, the first sensor 202 includeslogic to convert the sensed temperatures into digital representativevalues.

In one embodiment, the second sensor 203 comprises a replica corebehavior sensor and/or an in-situ timing warning sensor to determineand/or predict the behavior of the processor core 201. In oneembodiment, the behavior of the processor core 201 comprises at leastone of work load of the processor core 201 and timing margin for acritical data path in the processor 201. The replica core behaviorsensor is discussed herein with reference to FIGS. 6-7. The in-situtiming warning sensor is discussed herein with reference to FIGS. 8-9.

Referring back to FIG. 2, the second sensor 203 collects informationindicating the current behavior and possible future behavior of theprocessor core 201 under the current power supply and temperatureconditions. For example, the second sensor 203 may indicate via afrequency of a ring oscillator compared to a phase and frequency lockedprocessor clock signal whether the processor core 201 is slowing downwith decreasing temperature. Such sensing may indicate that theprocessor is entering the RTD region. The second sensor 203 may alsopredict timing failures by monitoring critical timing paths in theprocessor core 201. If the timing failures are predicted to occur astemperature level drops, then such sensing by the second sensor 203 mayindicate that the processor core 201 is entering the RTD region. Oncethe processor enters the RTD region, a control unit 204 uses the datafrom the sensor 203 to determine how much adjustment in voltage and/orfrequency need to be made for the processor core 201 so that thatprocessor core 201 operates reliably in the RTD region.

In one embodiment, the processor 200 comprises the control unit 204which determines control signals 209 and 210 for adjusting clock signalfrequency 211 and the operating power supply 212 for the processor core200. The control unit 204 is also referred herein as the power controlunit (PCU). In this embodiment, the control unit 204 is operable toreceive temperature and behavior information of the processor core 201via signals 208 and 207 from the first 202 and second 203 sensorsrespectively.

In one embodiment, the control unit 204 includes a storage medium havinginstructions stored thereon to operate the control unit 204, and whereinthe instructions are invisible to an operating system. In such anembodiment, the processor 200 is secured from malicious attempts tomodify the criteria for compensating RTD effects.

In one embodiment, the control unit 204 comprises a logic unit 204 awhich is operable to analyze the information from signals 208 and 207and compare them with information stored on a table 204 b of the controlunit 204. In such an embodiment, the logic unit 204 a determines whatclock signal frequency and/or power supply voltage level for theprocessor core 201 should be selected in view of the information fromthe signals 208 and 207. For example, the logic unit 204 a calculates anequation to compensate for slowdown of the transistors in the processorcore 201.

In one embodiment, the contents of the table 204 b include voltageidentification (VID) settings corresponding to various temperaturevalues and various phase locked loop (PLL) clock frequency outputsettings. The logic unit 204 a may determine what VID and clockfrequency setting to choose based on the information from the signals208 and 207. For example, the logic unit 204 a may select a frequencydivider ratio setting that determines the clock signal 211 frequencywithout having to relock the PLL 205. The logic unit 204 may alsoprovide new VID settings via signal 210 to a voltage regulator (VR) 206so that the VR may ramp up or down the power supply level 212 for theprocessor core 201.

In one embodiment, the adjustment to the frequency of the clock signal211 and the level of the power supply voltage 212 is performed slowlyenough for the processor core 201 to continue with its executionuninterrupted, i.e. the PLL 205 is not re-locked and/or the VR 206 isnot re-started from a discharged power supply level.

In one embodiment, the PLL 205 is an analog PLL. For example, the PLL205 is a self-biased PLL (SBPLL) which is operable to adjust thefrequency of the clock signal 211 by frequency steps, for example 100MHz steps. In such an embodiment, the signal 209 is used to selectsignal to select a multiplier ratio of a divider circuit (not shown) ofthe SBPLL so that its output frequency is adjusted by a step size (e.g.,100 MHz). In one embodiment, the PLL 205 is an all digital PLL (ADPLL).For example, the PLL 205 is operable to tune the frequency of the clocksignal 211 by a fine granularity, i.e. much finer than 100 MHz steps.The embodiments herein are not limited to the SBPLL and the ADPLL, anyother PLL, for example LCPLL, may be substituted for the PLL 205 withoutchanging the essence of the embodiments of the invention.

In one embodiment, the VR 206 is an on-die VR which is operable toregulate power supply 212 in response to the signal 210. In oneembodiment, the signal 210 from the control unit 204 is a VID signalwhich indicates a level of power supply 212 to be supplied to theprocessor core 201. In one embodiment, the VR 206 provides multiplepower supplies to the processor core 201 and the control unit 204 isoperable to determine power supply levels for each power supply for theprocessor core 201 to compensate for RTD effects.

In one embodiment, the control unit 204 uses data stored in on-die fuses(not shown) to determine the initial frequency for the clock signal 211and the power supply 212. In such an embodiment, as the processor core201 operates, the control unit 204 monitors the second sensor 203 andlearns the operating frequency limit at different voltage andtemperature points for the processor 201. In one embodiment, this learntdata is stored by the control unit 204 in an on-die register file array(not shown) and enables the adaptive compensation for the processor core201. In this embodiment, the register file array is operated on a powersupply which is the same power supply used by the first sensor 202. Thisallows the register file array to save the learnt data as long as thefirst sensor 202 is capable of sensing temperature of the processor core201.

In one embodiment, after the learning cycle is complete, the controlunit 204 begins to operate in the fully-adaptive mode. For example, ifthe temperature of the processor core 201 is dropping and the controlunit 204 determines that the processor core 201 is in the RTD region ofoperation, the second sensor 203 will signal the control unit 204 thatthe processor core 201 should be compensated for RTD effects. In oneembodiment, the control unit 204 performs RTD compensation by reducingfrequency (through the PLL 205) of the clock signal 211 or by raisingvoltage (through the VR 206) of the power supply 212 until the secondsensor 203 signals a stable operation. In one embodiment, a combinationof partial voltage and partial frequency adjustment is implemented bythe control unit 204 to compensate for RTD effects. In one embodiment,the control unit 204 maintains power supply voltage 212 and clockfrequency 211 conditions above the timing failure point, i.e. theprocessor core 201 is operated at slightly higher voltage and/or lowerclock frequency to prevent any timing critical paths from failing.

FIG. 3 is a processor 300 with multiple hardware processing cores 301₁₋₄ and with logic units for adaptively compensating RTD effects,according to one embodiment of the invention. The embodiment of FIG. 3is similar to the embodiment of FIG. 2 except that the processor 300includes multiple hardware processing cores 301 ₁₋₄ and that the PCU 304is operable compensate for RTD effects in each hardware processing coreindependently or collectively.

So as not to obscure the embodiments of FIG. 3, only additional features(additional to those discussed with reference to FIG. 2) will bediscussed herein. While the embodiment of FIG. 3 shows four hardwareprocessing cores 301 ₁₋₄, the embodiments of the invention areapplicable to any number of hardware processing cores 301 ₁₋₄ withoutchanging the scope of the embodiments of the invention.

In one embodiment, the processor 300 comprises cache memories 307 ₁₋₄coupled to individual hardware processing cores 301 ₁₋₄. In oneembodiment, the processor 300 comprises multiple on-die VRs 306 ₁₋₄ toprovide regulated power supply (one or more) to the correspondinghardware processing cores 301 ₁₋₄. In one embodiment, the processor 300comprises multiple first 302 ₁₋₄ and second 303 ₁₋₄ sensors distributedat various locations in the hardware processing cores 301 ₁₋₄ The shadedsensors (302 ₁₋₄) represent the temperature sensors while the un-shadedsensors (303 ₁₋₄) represent the behavior sensors. In one embodiment,each of the hardware processing cores 301 ₁₋₄ includes its correspondingPLL 305 ₁₋₄.

While the embodiments herein illustrate one PLL per hardware processingcore, each hardware processing core can have multiple PLLs forgenerating clock signals for different logic units (e.g., forinput-output transceivers, for general core operation, etc). In such anembodiment, the PCU 304 is operable to adjust the clock frequency ofeach PLL in the hardware processing core to compensate for RTD effects.

In one embodiment, the PCU 304 includes a table 304 b that stores VIDsettings corresponding to various temperature values and various PLLclock frequency output settings for each of the hardware processingcores 301 ₁₋₄. In one embodiment, the PCU 304 includes a logic unit 304a (similar to logic unit 204 a of FIG. 2) which is operable to receivesensor data from the first 302 ₁₋₄ and second 303 ₁₋₄ sensors via signalbuses 308 and 307 respectively. In one embodiment, the PCU 304 analyzes(as discussed with reference to FIG. 2) the sensor data from signalbuses 308 and 307 and generates VID settings 312 for voltage regulators306 ₁₋₄ and PLL clock frequency settings 311 for PLLs 305 ₁₋₄.

In one embodiment, at power-up, the PCU 304 uses data stored in on-diefuses (not shown) to determine the initial frequencies for the clocksignals 311 to be generated by each PLL from among the PLLs 305 ₁₋₄, andthe power supply levels 312 to be supplied by each of the VRs 306 ₁₋₄.In such an embodiment, as each processor core from among the processingcores 301 ₁₋₄ operates, the PCU 304 monitors the second sensors 302 ₁₋₄for each processor core and learns the operating frequency limit atdifferent voltage and temperature points for the each processor core.

In one embodiment, this learnt data is stored by the PCU 304 in anon-volatile memory (not shown) and enables the adaptive compensationfor each processor core from among the processor cores 301 ₁₋₄. In oneembodiment, the non-volatile memory is part of the processor 300. Inanother embodiment, the non-volatile memory is communicatively coupledto the processor 300. In one embodiment, the learnt data is stored bythe PCU 304 in a register file array (not shown) in each of theprocessor cores 301 ₁₋₄. In this embodiment, the register file array isoperated on a power supply which is the same power supply used by thefirst sensors 302 ₁₋₄.

In one embodiment, when the entire processor 300 is powered down or goesthrough a full reset cycle, this data in the register file arrays ofeach processor core is lost and may need to be re-learned at the nextpower-on event. In one embodiment, when entire processor 300 is powereddown or goes through a full reset cycle, the learnt data is not lostbecause it is stored in a non-volatile memory. In such an embodiment,upon a next power-on event, the learnt data is available to the PCU 304.

In one embodiment, when the one of the processor cores 301 ₁₋₄ is shutoff to save leakage power dissipation (or for any other reason), thevoltage and temperature coefficients are maintained either in theregister file array of that processor or in the non-volatile memory (ofthe processor 300 or communicatively coupled to the processor 300).After the learning cycle is complete, the PCU 304 will start operatingin the fully-adaptive mode. For example, if any of the processor cores'temperature is dropping and the PCU 304, via the second sensors 303 ₁₋₄,determines that one of the processor cores 301 ₁₋₄ is operating in theRTD region, the PCU 304 will implement the compensation for RTD effectsby reducing frequency of the clock signal 311 (through the PLL) or byraising voltage (through the VR) until the second sensor signals stableoperation. The term “stable” herein refers to correct operation by theprocessor, i.e. the critical paths in the processor are properlyfunctioning. In one embodiment, a combination of partial voltage andpartial frequency adjustment is performed. In one embodiment, the PCU304 always maintains power supply voltage and clock frequency conditionsabove the timing failure point, i.e. the processing cores are operatingat slightly higher power supply voltage and/or lower clock frequency toprevent any timing critical paths from failing.

FIG. 4 is a plot 400 showing NTD 102 and RTD 103 regions with optionsfor adaptively compensating RTD effects, according to one embodiment ofthe invention. FIG. 4 is described with reference to FIGS. 1-3. The plot400 shows the graphical representation of the processor operation 401and actions performed by the PCU 204/304. The x-axis of the plot 100 isprocessor frequency while the y-axis of the plot 100 is supply voltageto the processor. When the processor operates at Vins 101 (i.e., when401 intersects 101) the transistor drive current in the processor isinsensitive to temperature changes.

In one embodiment, when the PCU 204/304 determines that the processor orany processor core of the processor is operating in RTD region, the PCU204/304 has at least three options to compensate for RTD effects. Thesethree options are indicated by reference signs 402, 403, and 404.

In option 402, the PCU 204/304 instructs the VR(s) 306 ₁₋₄/206 toincrease its power supply level supplied to the processor core 201 tocompensate for RTD effects. For example, for the same clock signalfrequency of 1.6 GHz, the power supply voltage is increased from 0.8V to0.88V.

In option 403, the PCU 204/304 instructs the PLL(s) 205/305 ₁₋₄ toreduce their clock signal frequency which is being used by the processorcore 201. For example, for the same power supply voltage level from theVR 206/306 ₁₋₄, the frequency of the clock signal to the processorcore(s) is reduced from 1.6 GHz to 1 GHz. In option 404, the PCU 204/304instructs both the PLL(s) 205/305 ₁₋₄ and the VR(s) 206/306 ₁₋₄ toreduce clock signal frequency and raise the power supply level,respectively, to compensate for RTD effects.

FIG. 5 is a method flowchart 500 for adaptively compensating RTDeffects, according to one embodiment of the invention. Although theblocks in the flowchart 500 are shown in a particular order, the orderof the actions can be modified. Thus, the illustrated embodiments can beperformed in a different order, and some actions/blocks may be performedin parallel. Additionally, one or more actions/blocks can be omitted invarious embodiments of adaptively compensating RTD effects. Theflowchart of FIG. 5 is illustrated with reference to the embodiments ofFIGS. 2-4.

At block 501, the first sensor(s) 202/302 ₁₋₄ determines an operatingtemperature of a processor core(s) 201/301 ₁₋₄. As discussed herein, thefirst sensor is a temperature sensor including local and remote sensorsdistributed at various locations in the processor core. In oneembodiment, the first sensor 202 includes logic to convert the sensedtemperatures into digital representative values.

At block 502, the second sensor(s) 203/303 ₁₋₄ determines a behavior forthe processor core(s) 201/301 ₁₋₄. As discussed herein, in oneembodiment, the second sensor 203 comprises a replica core behaviorsensor and/or an in-situ timing warning sensor to determine and/orpredict the behavior of the processor core 201. In one embodiment, thebehavior of the processor core 201 comprises at least one of work loadof the processor core(s) 201/301 ₁₋₄, and timing margin for a criticaldata path in the processor core(s) 201/301 ₁₋₄. The replica corebehavior sensor is discussed herein with reference to FIGS. 6-7. Thein-situ timing warning sensor is discussed herein with reference toFIGS. 8-9.

In one embodiment, the PCU 204/304 monitors the temperature and behaviordata from the respective first 202/302 ₁₋₄ and second 203/303 ₁₋₄sensors and over time generates a collection of monitored data. In oneembodiment, the PCU 204/304 is stored in a non-volatile memory of theprocessor core 201/301 ₁₋₄ or communicatively coupled to the processorcore(s) 201/301 ₁₋₄.

Referring back to FIG. 5, at block 503 the PCU 204/304 receives thetemperature and behavior information from respective first 202/302 ₁₋₄and second 203/303 ₁₋₄ sensors and learns an operating frequency limitfor the processor core(s) 201/301 ₁₋₄ at various power supply levels. Atblock 504, the PCU 204/304 determines an operating clock signalfrequency of the processor core(s) 201/301 ₁₋₄ and the supplies power tothe processor core(s) 201/301 ₁₋₄ according to the received temperatureand behavior information from respective first 202/302 ₁₋₄ and second203/303 ₁₋₄ sensors.

As discussed with reference to FIG. 4, the PCU 204/304 has at leastthree options (402, 403, and 404) for compensating for RTD effects. Atblock 505, the PCU 204/304 signals the PLL(s) 205/305 ₁₋₄ to reduce itsoutput clock frequency when the processor core(s) 201/301 ₁₋₄ isoperating in the RTD region. At block 506, the PCU 204/304 signals theVR(s) 206/306 ₁₋₄ to raise its power supply voltage level when theprocessor core(s) 201/301 ₁₋₄ is operating in the RTD region.

FIG. 6 is a replica ring oscillator circuit 600 for sensing the behaviorof the processor core(s) 201/301 ₁₋₄ for adaptively compensating RTDeffects, according to one embodiment of the invention. As discussedherein, the replica ring oscillator circuit 600 is one of the secondsensor(s) 203/303 ₁₋₄. FIG. 6 is described with reference to FIGS. 1-5.

In one embodiment, the replica ring oscillator circuit 600 comprises aring oscillator 601 to generate a first signal 607 (also called the ringoscillator clock signal) having a first frequency. In one embodiment,the ring oscillator 601 is operable to mimic actual temperaturedependence of a processor core 201. In the embodiment of FIG. 3, wherethe processor 300 comprises multiple hardware processing cores 301 ₁₋₄,each processing core includes a corresponding replica ring oscillatorcircuit 600.

Referring back to FIG. 6, in one embodiment the ring oscillator 601 hasan overall delay which is a programmable delay. In one embodiment, thering oscillator 601 is operable to include or exclude delay elements aspart of the ring oscillator 601. For example, any of the delay elementsshown in the ring oscillator 601 can be included or excluded from thering forming the oscillator, wherein the ring oscillator 601 is operableto include or exclude delay elements to mimic the actual temperaturedependence of the processor core 201 of the processor 200.

So as not to obscure the embodiments of the invention, the descriptionherein discusses the use of the replica ring oscillator 600 for theprocessor core 201. For multi-core processors, as shown in FIG. 3, eachprocessor core from the processor cores 301 ₁₋₄ includes its own replicaring oscillator (second sensors 303 ₁₋₄) to mimic the actual temperaturedependence of that processor core, according to one embodiment. In suchan embodiment, the PCU 304 is operable to receive the outputs from eachreplica ring oscillator and determine the behavior of each processorcore and the overall processor 300. In one embodiment, the PCU 304increases the power supply to the processor core that is indicating RTDeffects.

In one embodiment, the delay elements (Delay elements 1-M) of the ringoscillator 601 comprise transistors of different voltage thresholds. Thering oscillator 601 indicates three shades—white 601 a, light gray 601b, and dark gray 601 c—indicating the different threshold voltages fordifferent delay cells. In one embodiment, the delay elements 601 a havetransistors with a first voltage threshold while the delay elements 601b have transistors with a second voltage threshold, wherein the secondvoltage threshold is higher than the first voltage threshold. In oneembodiment, the delay elements 601 c have transistors of a third voltagethreshold, wherein the third voltage threshold is higher than the secondvoltage threshold. The embodiments herein describe transistors withfirst, second, and third thresholds. However, the delay elements mayhave N and P transistors and so the embodiments contemplate differentthresholds for N and P transistors such that the N and P transistorthresholds of delay elements 601 a are different from the N and Ptransistor thresholds of the delay elements 601 b and 601 c.

In one embodiment, the delay elements (or cells) comprise invertershaving n-type transistors of different thresholds voltages and p-typetransistors of different thresholds. The higher the transistor Vt(voltage threshold) the stronger the reverse temperature behavior at lowpower supply voltage is observed. In one embodiment, the ring oscillator601 uses a combination of inverters (delay elements) with differentvoltage thresholds to mimic the reverse temperature behavior of anycircuit with a Vt composition in between.

Another factor that can be used in addition or instead of the Vtdependence is transistor stacking, for example AND vs. OR stack, 2-deepor 3-deep stacked transistors. Since the reverse temperature dependenceis different for each of these circuits, the composite behavior of theprocessor core(s) is mimicked by adjusting the composition of eachcircuit type. In one embodiment, the delay elements (or cells) compriseone or more of: two input NAND gates, three input NAND gates, two inputNOR gates, or three input NOR gates, wherein the NAND and NOR gates mayhave N and P transistors of different thresholds and same thresholds.One reason for having multiple input logic gates is to incorporate theeffects of stacked N and P transistors. In one embodiment, the ringoscillator 601 operates on a power supply which is the same as the powersupply of a core of the processor.

In one embodiment, the replica ring oscillator circuit 600 furthercomprises: a first counter 603 to generate a first count 610corresponding to the first frequency of the first signal 607. In oneembodiment, the replica ring oscillator circuit 600 further comprises asecond counter 602 to generate a second count 609 corresponding to afrequency of a clock signal of the processor core 201. The first 603 andsecond 602 counters may be implemented by any known logicalimplementations for counters without changing the scope of theembodiments of the invention.

In one embodiment, the ring oscillator 601 further comprises acomparator 606, coupled to the first 603 and second 602 counters, tocompare the first 610 and second 609 counts and to generate an outputsignal 606 indicating a behavior of the processor core 201. Thecomparator may be implemented with any known comparator architectureswithout changing the scope of the embodiments of the invention.

In one embodiment, a programmable or programmed logic unit (e.g., fuses)605 selects, from among the various types of delay elements, aconfiguration of the ring oscillator 601 via select signal 611 thatwould best mimic the behavior of the processor. For example, if theprocessor 200 is formed from a wafer die which happens to have highertransistor voltage thresholds than other processors in the same waferdie then the logic unit 605 selects delay elements 601 b and/or 601 cwhich have transistors with higher threshold voltages when configuringthe ring oscillator 601. In one embodiment, registers 604 store the ringoscillator configuration settings via signal 612. The registers 604 canbe used for setting a length of the counters 603 and 602 via signals 614and 613 respectively.

In one embodiment, the replica ring oscillator circuit 600 is calibratedto match the processor core 201 operating voltage, frequency, andtemperature behavior. In one embodiment, the ring oscillator 600includes multiple sub-rings connected in parallel, each sub-ring usingcircuits with a different temperature dependency. In one embodiment, aset of on-die fuses (e.g., logic 605) selects via signal 611 whichsub-rings are enabled such that all combined sub-rings mimic theprocessor core 201 operating voltage, frequency, and temperaturedependence.

In one embodiment, the ring oscillator output 207 is compared to theoperating frequency of the processor core 201 and the result is send tothe PCU 204. In one embodiment, the output signal 207 is a single bitthat indicates the need to correct for RTD effects. In one embodiment,the output signal 207 is a set of bits that indicate the magnitude ofthe required correction to enable faster correction by using largersteps to catch up.

In one embodiment, after the ring oscillator 601 is configured by thelogic unit 605 to mimic the behavior of the processor core 201, thefrequency of the ring oscillator 601 represented by first count signal610 is compared with the frequency of the processor core PLL clocksignal frequency 608 which is represented by second count signal 609. Ifthe first count signal 610 is lower than the second count signal 609then the output 207 of the comparator 606 indicates that processor core201 is operating in the RTD region and so the PLLs may need to beadjusted to reduce the frequency of the clock signal 608 (same as 211 ofFIG. 2).

In one embodiment, the PCU 204 receives the output signal 207 whichindicates a difference between the frequencies of the ring oscillatorsignal 607 and the core clock signal 608, and compares the difference infrequencies with the difference of frequencies in the lookup table 204b. In one embodiment, the lookup table 204 b indicates what the powersupply level and/or the processor core clock signal frequency should beset for a particular difference in ring oscillator signal 607 and thecore clock signal 608. In one embodiment, the content of the lookuptable 204 b is programmable. In one embodiment, the content of thelookup table 204 b is not visible to the operating system.

FIG. 7 is a method flowchart 700 for sensing the behavior of theprocessor via the replica ring oscillator 600 for adaptivelycompensating RTD effects, according to one embodiment of the invention.Although the blocks in the flowchart 700 are shown in a particularorder, the order of the actions can be modified. Thus, the illustratedembodiments can be performed in a different order, and someactions/blocks may be performed in parallel. Additionally, one or moreactions/blocks can be omitted in various embodiments of sensing thebehavior of the processor for adaptively compensating RTD effects. Theflowchart of FIG. 7 is illustrated with reference to the embodiments ofFIGS. 2-6.

At block 701, the first signal 607 having a first frequency which mimicsactual temperature dependence of the processor core 201 is generated bythe ring oscillator 601. At block 702, delay elements (601 a-c) areincluded or excluded from sub-rings of the ring oscillator 601. Asdiscussed herein, the delay element comprises one or more of: invertershaving n-type transistors of different thresholds voltages and p-typetransistors of different thresholds, two input NAND gates, three inputNAND gates, two input NOR gates, or three input NOR gates.

At block 703, a first count 610 is generated by the first counter 603,wherein the first count 610 corresponds to the first frequency (of thesignal 607). At block 704, a second count 609 is generated by the secondcounter 602, wherein the second count 609 corresponds to a frequency ofa clock signal 608 of the processor core 201. At block 705, the first610 and second 609 counts are compared by the comparator 606. At block706, the comparator 606 generates an output signal 207 (also called thethird signal) indicating the behavior of the processor core 201. Theoutput signal 207 is transmitted to the PCU 204.

At block 707, the PCU 204 determines a frequency of the clock signal forthe processor core and a power supply level for the processor coreaccording to an operating temperature of the processor and the outputsignal. In one embodiment, the PCU 204 reduces the frequency of the coreclock signal 608, according to the output signal 207, when the operatingtemperature and voltage level indicate that the processor core 201 is ina region of RTD. In one embodiment, the PCU 204 causes the VR 206 toincrease the power supply level, according to the output signal 207,when the operating temperature and the power supply voltage levelindicate that the processor core 201 is operating in the region of RTD.In one embodiment, the PCU 204 causes the VR 206 to increase its powersupply level and causes the PLL 205 to reduce the core clock frequency.

FIG. 8 is a logical path 800 with an in-situ timing error warning sensor803 for sensing the behavior of the processor for adaptivelycompensating RTD effects, according to one embodiment of the invention.So as not to obscure the embodiments of the invention, the descriptionherein discusses the use of the in-situ timing error warning sensor 803for the processor core 201. For multi-core processors, as shown in FIG.3, each processor core from the processor cores 301 ₁₋₄ includes its ownin-situ timing error warning sensor 803 (second sensors 303 ₁₋₄) tomimic the actual temperature dependence of that processor core. In suchan embodiment, the PCU 304 is operable to receive the outputs from eachin-situ timing error warning sensor and determine the behavior of eachprocessor core of the processor 300. In one embodiment, the PCU 304increases the power supply to the processor core that is indicating RTDeffects.

In one embodiment, the second sensor 203 is the in-situ timing errorwarning sensor 803. In one embodiment, the in-situ timing error warningsensor 803 is placed at the end of all timing critical paths andprovides an early warning of an imminent timing failure before thefailure actually occurs. For example, with reference to the logic path800, the in-situ timing error warning sensor 803 is placed aftercombinational logic 802, wherein the critical path begins at the inputof a sequential logic unit 801 and ends at the input of the in-situtiming error warning sensor 803.

In one embodiment, in-situ timing error warning sensor 803 comprises afirst sequential logic unit 805 to receive a data signal 802 d from thecombinational logic unit 802, the first sequential logic unit 805 togenerate a first output signal 815. In this embodiment, the in-situtiming error warning sensor 803 further comprises; a second sequentiallogic unit 806 operable to receive a delayed data signal 812 from thecombinational logic unit 802, the second sequential logic unit 806 togenerate a second output signal 813.

In one embodiment, the in-situ timing error warning sensor 803 comprisesa comparator 814 to compare the first 815 and second 813 output signalsand to generate a third output signal 816, wherein the third outputsignal 816 indicates a timing behavior of a data path (D_in→801→801q→802→815) in the processor core 201, and wherein the third outputsignal 816 is received by the PCU 204 to adjust a power supply or clocksignal frequency of the processor core 201 according to the third outputsignal 813. In one embodiment, the comparator 814 is an Exclusive-OR(XOR) gate which generates a pulse on its output node to indicate that atiming failure is imminent.

In one embodiment, the first 805 and second 806 sequential logic unitsare flip-flops. In other embodiments, other sequential logic units maybe used without changing the essence of the embodiments of theinvention. In one embodiment, the first sequential logic unit 805 storesthe correct logic value at the end of the critical path. That correctvalue, i.e. signal 815, is received by downstream logic (not shown) forfurther processing. In this embodiment, the second sequential logic unit806 stores the delayed signal 812, which will fail first if thisadditional delay caused by buffers in 807 or 808 and 811 exceeds theexisting timing margin. In one embodiment, when the two sequential logicunits 805 and 806, which receive the same clock signal 818, latchopposite logic values, the comparator 814 will generate an output signal816 that will indicate that a timing failure is imminent.

In one embodiment, the delay applied to the signal 812 is adjustable viathe multiplexer 811 which is operable to select input delay signals 809or 810, where the signal 810 is delayed more than the signal 809. Insuch an embodiment, the multiplexer 811 is controlled by a select signal819. In one embodiment, the select signal is generated by the PCU 204.One reason for having the capability of adjusting the delay to thesignal 812 is to change the granularity of when to indicate a timingfailure warning. A longer delay may provide more time to react forcompensating for RTD effects after generating the warning signal 207. Inone embodiment, the delay units 807 and 808 comprise one or morebuffers.

In one embodiment, the output of the comparator 814 is received by agate 804 which applies logical OR operation with other signals 817output from other comparators (not shown) from other critical paths inthe processor core 201. In one embodiment, the gate 804 comprises a NORgate. In one embodiment, the output 207 of the gate 804 is output to thePCU 204. In one embodiment, the PCU 204 is operable to perform at leastone of the following according to the signal 207: reduce the frequencyof the clock signal when the operating temperature is in a region ofRTD; increase the power supply level when the operating temperature isin the region of RTD; or increase the power supply level and reducefrequency of the clock signal when the operating temperature is in theregion of RTD.

In one embodiment, a distributed NOR gate 804 merges all the failuresignals into a single bit that indicates a timing failure is imminent.The term “distributed” herein refers to two or more NOR gates thatreceive outputs from various comparators to generate a single bit thatindicates that a timing failure is imminent. In one embodiment, thesingle bit is sent to the PCU 204/304 which will immediately lower thefrequency of the processor core or raise the voltage level to theprocessor core 201. In one embodiment, lowering the frequency may bepreferred over increasing the voltage supply level because lowering thefrequency can be achieved faster. In other embodiments, the reverse ispossible without changing the scope of the embodiments of the invention.In one embodiment, the in-situ method discussed herein enables closeradaptive tracking since the in-situ sensor 803 provides a real-timeindication of an impending timing failure.

In one embodiment, with reference to FIG. 3, the third output signal islogically OR-ed with other output signals from other comparators,wherein the other output signals are from other data paths in otherhardware processing cores of the processor 300.

FIG. 9 is a method flowchart 900 sensing the behavior of the processor201 via the in-situ timing error warning sensor 803 for adaptivelycompensating RTD effects, according to one embodiment of the invention.

Although the blocks in the flowchart 900 are shown in a particularorder, the order of the actions can be modified. Thus, the illustratedembodiments can be performed in a different order, and someactions/blocks may be performed in parallel. Additionally, one or moreactions/blocks can be omitted in various embodiments of sensing thebehavior of the processor via the in-situ timing error warning sensorfor adaptively compensating RTD effects. The flowchart of FIG. 9 isillustrated with reference to the embodiments of FIGS. 2-8.

At block 901, the first sequential logic unit 805 receives the datasignal 802 d from the combinational logic unit 802. At block 902, thefirst sequential logic unit 805 latches the data signal 802 d togenerate the first output signal 815. This first output signal 815 isthen transmitted to other logic units downstream. At block 903, thesecond sequential logic unit 806 receives a delayed version 812 of thedata signal 802 d. At block 904, the second sequential logic unit 806latches the delayed data signal 812 to generate the second output signal813. At block 905, the comparator 814 compares the first 815 and second813 output signals to generate an output signal 816. In one embodiment,the output signal 816 is logically OR-ed with other similar signalswhich are outputs from other comparators of other data paths in theprocessor core 201 or other processor cores 301 ₁₋₄. At block 906, theoutput of the logical OR operation generates a third output signal 207indicating a timing behavior of the data path of 800 in the processorcore 201. The output signal 207 is then sent to the PCU 204 forgenerating control signals for the VR 206 and/or the PLL 205 tocompensate for RTD effects.

FIG. 10 is a system-level diagram 1600 of a smart device comprising aprocessor with is operable to adaptively compensate RTD effects,according to one embodiment of the invention. FIG. 10 also illustrates ablock diagram of an embodiment of a mobile device in which flat surfaceinterface connectors could be used. Computing device 1600 represents amobile computing device, such as a computing tablet, a mobile phone orsmart-phone, a wireless-enabled e-reader, or other wireless mobiledevice. It will be understood that certain of the components are showngenerally, and not all components of such a device are shown in device1600. Device 1600 includes processor 1610 such as the processor 200/300discussed herein.

The processor 1610 can include one or more physical devices, such asmicroprocessors, application processors, microcontrollers, programmablelogic devices, or other processing means. The processing operationsperformed by processor 1610 include the execution of an operatingplatform or operating system on which applications and/or devicefunctions are executed. The processing operations include operationsrelated to I/O (input/output) with a human user or with other devices,operations related to power management, and/or operations related toconnecting device 1600 to another device. The processing operations mayalso include operations related to audio I/O and/or display I/O.

In one embodiment, device 1600 includes audio subsystem 1620, whichrepresents hardware (e.g., audio hardware and audio circuits) andsoftware (e.g., drivers, codecs) components associated with providingaudio functions to the computing device. Audio functions can includespeaker and/or headphone output, as well as microphone input. Devicesfor such functions can be integrated into device 1600, or connected todevice 1600. In one embodiment, a user interacts with device 1600 byproviding audio commands that are received and processed by processor1610.

Display subsystem 1630 represents hardware (e.g., display devices) andsoftware (e.g., drivers) components that provide a visual and/or tactiledisplay for a user to interact with the computing device. Displaysubsystem 1630 includes display interface 1632, which includes theparticular screen or hardware device used to provide a display to auser. In one embodiment, display interface 1632 includes logic separatefrom processor 1610 to perform at least some processing related to thedisplay. In one embodiment, display subsystem 1630 includes a touchscreen (or touch pad) device that provides both output and input to auser.

I/O controller 1640 represents hardware devices and software componentsrelated to interaction with a user. I/O controller 1640 can operate tomanage hardware that is part of audio subsystem 1620 and/or displaysubsystem 1630. Additionally, I/O controller 1640 illustrates aconnection point for additional devices that connect to device 1600through which a user might interact with the system. For example,devices that can be attached to device 1600 might include microphonedevices, speaker or stereo systems, video systems or other displaydevice, keyboard or keypad devices, or other I/O devices for use withspecific applications such as card readers or other devices.

As mentioned above, I/O controller 1640 can interact with audiosubsystem 1620 and/or display subsystem 1630. For example, input througha microphone or other audio device can provide input or commands for oneor more applications or functions of device 1600. Additionally, audiooutput can be provided instead of or in addition to display output. Inanother example, if display subsystem includes a touch screen, thedisplay device also acts as an input device, which can be at leastpartially managed by I/O controller 1640. There can also be additionalbuttons or switches on device 1600 to provide I/O functions managed byI/O controller 1640.

In one embodiment, the I/O controller 1640 manages devices such asaccelerometers, cameras, light sensors or other environmental sensors,or other hardware that can be included in device 1600. The input can bepart of direct user interaction, as well as providing environmentalinput to the system to influence its operations (such as filtering fornoise, adjusting displays for brightness detection, applying a flash fora camera, or other features).

In one embodiment, device 1600 includes power management 1650 thatmanages battery power usage, charging of the battery, and featuresrelated to power saving operation. Memory subsystem 1660 includes memorydevices for storing information in device 1600. Memory can includenonvolatile (state does not change if power to the memory device isinterrupted) and/or volatile (state is indeterminate if power to thememory device is interrupted) memory devices. Memory 1660 can storeapplication data, user data, music, photos, documents, or other data, aswell as system data (whether long-term or temporary) related to theexecution of the applications and functions of system 1600.

Elements of embodiments are also provided as a machine-readable medium(e.g., memory 1660) for storing the computer-executable instructions(e.g., instructions to implement the flowcharts of FIG. 5, FIG. 7, FIG.9 and any other processes discussed herein). The machine-readable medium(e.g., memory 1660) may include, but is not limited to, flash memory,optical disks, CD-ROMs, DVD ROMs, RAMs, EPROMs, EEPROMs, magnetic oroptical cards, or other type of machine-readable media suitable forstoring electronic or computer-executable instructions. For example,embodiments of the invention may be downloaded as a computer program(e.g., BIOS) which may be transferred from a remote computer (e.g., aserver) to a requesting computer (e.g., a client) by way of data signalsvia a communication link (e.g., a modem or network connection).

Connectivity 1670 includes hardware devices (e.g., wireless and/or wiredconnectors and communication hardware) and software components (e.g.,drivers, protocol stacks) to enable device 1600 to communicate withexternal devices. The device could be separate devices, such as othercomputing devices, wireless access points or base stations, as well asperipherals such as headsets, printers, or other devices.

Connectivity 1670 can include multiple different types of connectivity.To generalize, device 1600 is illustrated with cellular connectivity1672 and wireless connectivity 1674. Cellular connectivity 1672 refersgenerally to cellular network connectivity provided by wirelesscarriers, such as provided via GSM (global system for mobilecommunications) or variations or derivatives, CDMA (code divisionmultiple access) or variations or derivatives, TDM (time divisionmultiplexing) or variations or derivatives, or other cellular servicestandards. Wireless connectivity 1674 refers to wireless connectivitythat is not cellular, and can include personal area networks (such asBluetooth, Near Field, etc), local area networks (such as Wi-Fi), and/orwide area networks (such as WiMax), or other wireless communication.

Peripheral connections 1680 include hardware interfaces and connectors,as well as software components (e.g., drivers, protocol stacks) to makeperipheral connections. It will be understood that device 1600 couldboth be a peripheral device (“to” 1682) to other computing devices, aswell as have peripheral devices (“from” 1684) connected to it. Device1600 commonly has a “docking” connector to connect to other computingdevices for purposes such as managing (e.g., downloading and/oruploading, changing, synchronizing) content on device 1600.Additionally, a docking connector can allow device 1600 to connect tocertain peripherals that allow device 1600 to control content output,for example, to audiovisual or other systems.

In addition to a proprietary docking connector or other proprietaryconnection hardware, device 1600 can make peripheral connections 1680via common or standards-based connectors. Common types can include aUniversal Serial Bus (USB) connector (which can include any of a numberof different hardware interfaces), DisplayPort including MiniDisplayPort(MDP), High Definition Multimedia Interface (HDMI), Firewire, or othertype.

Reference in the specification to “an embodiment,” “one embodiment,”“some embodiments,” or “other embodiments” means that a particularfeature, structure, or characteristic described in connection with theembodiments is included in at least some embodiments, but notnecessarily all embodiments. The various appearances of “an embodiment,”“one embodiment,” or “some embodiments” are not necessarily allreferring to the same embodiments. If the specification states acomponent, feature, structure, or characteristic “may,” “might,” or“could” be included, that particular component, feature, structure, orcharacteristic is not required to be included. If the specification orclaim refers to “a” or “an” element, that does not mean there is onlyone of the elements. If the specification or claims refer to “anadditional” element, that does not preclude there being more than one ofthe additional element.

While the invention has been described in conjunction with specificembodiments thereof, many alternatives, modifications and variations ofsuch embodiments will be apparent to those of ordinary skill in the artin light of the foregoing description.

For example, the adaptive RTD compensation discussed herein is notlimited to processor cores, but can be used for any other circuitsexperiencing RTD effects. In one embodiment, the RTD compensationtechniques discussed herein can be applied to graphics accelerators. Inother embodiments, the RTD compensation techniques discussed herein canbe applied to media blocks. In one embodiment, the RTD compensationtechniques discussed herein can be applied to cache or memorycontrollers.

The embodiments of the invention are intended to embrace all suchalternatives, modifications, and variations as to fall within the broadscope of the appended claims.

An abstract is provided that will allow the reader to ascertain thenature and gist of the technical disclosure. The abstract is submittedwith the understanding that it will not be used to limit the scope ormeaning of the claims. The following claims are hereby incorporated intothe detailed description, with each claim standing on its own as aseparate embodiment.

I claim:
 1. A sensor comprising: a ring oscillator to generate a firstsignal having a first frequency, the ring oscillator operable to mimicactual temperature dependence of a processor, wherein the ringoscillator comprises: one or more delay elements of a first voltagethreshold; and one or more delay elements of a second voltage threshold,wherein the second voltage threshold is higher than the first voltagethreshold; a first counter to generate a first count corresponding tothe first frequency; a second counter to generate a second countcorresponding to a frequency of a clock signal of the processor; and acomparator, coupled to the first and second counters, to compare thefirst and second counts and to generate an output signal indicating abehavior of the processor, wherein the frequency of the clock signal isreduced or the power supply level to the processor is increasedaccording to the output signal when an operating temperature of theprocessor is in a region of temperature dependence (RTD).
 2. The sensorof claim 1, wherein the ring oscillator comprises: one or more delayelements of a third voltage threshold, wherein the third voltagethreshold is higher than the second voltage threshold.
 3. The sensor ofclaim 2, wherein the one or more delay elements of the first, second,and third voltage thresholds comprise inverters.
 4. A system comprising:a wireless connectivity; and a processor having a sensor, the processorcommunicatively coupled to the wireless connectivity, the sensoraccording to any of the sensor claims 1 to
 3. 5. A method comprising:generating a first signal having a first frequency which mimics actualtemperature dependence of a processor; generating a first countcorresponding to the first frequency; generating a second countcorresponding to a frequency of a clock signal of the processor; andcomparing the first and second counts; generating an output signalindicating behavior of the processor based on at least the comparison ofthe first and second counts; and reducing the frequency of the clocksignal or increasing the power supply level to the processor, accordingto the output signal, when an operating temperature of the processor isin a region of reverse temperature dependence (RTD).
 6. The method ofclaim 5, wherein the first signal having the first frequency isgenerated by a ring oscillator having a programmable delay.
 7. Themethod of claim 6 further comprises including or excluding delayelements as part of the ring oscillator, the delay elements havingtransistors of different voltage thresholds.
 8. The method of claim 7,wherein including or excluding delay elements is performed to mimic theactual temperature dependence of a core of the processor.
 9. The methodof claim 6 further comprises operating the ring oscillator on a powersupply which is the same as the power supply of a core of the processor.10. The method of claim 6, wherein the ring oscillator comprises: one ormore delay elements of a first voltage threshold; and one or more delayelements of a second voltage threshold, wherein the second voltagethreshold is higher than the first voltage threshold.
 11. The method ofclaim 10, wherein the ring oscillator comprises: one or more delayelements of a third voltage threshold, wherein the third voltagethreshold is higher than the second voltage threshold.
 12. The method ofclaim 11, wherein the one or more delay elements of the first, second,and third voltage thresholds comprise inverters.
 13. The method of claim6, wherein the processor comprises a plurality of hardware processingcores, and wherein the ring oscillator is a plurality of ringoscillators, each of which corresponds to a processing core from theplurality of hardware processing cores.
 14. The method of claim 13further comprises: setting one or more fuses to adjust a delay for eachring oscillator of the plurality of ring oscillators.
 15. The method ofclaim 6, wherein the ring oscillator comprises one or more of: invertershaving n-type transistors of different thresholds voltages and p-typetransistors of different thresholds, two input NAND gates, three inputNAND gates, two input NOR gates, or three input NOR gates.
 16. Themethod of claim 5 further comprises receiving the output signal by apower control unit.
 17. The method of claim 5 further comprisesdetermining a frequency of the clock signal for the processor and apower supply level for the processor according to an operatingtemperature of the processor and the output signal.
 18. The method ofclaim 5 further comprises comparing the output signal with predetermineddifferences between the first and second frequencies.
 19. The method ofclaim 5 further comprises: reducing the frequency of the clock signal,according to the output signal, when the operating temperature is in theregion of RTD by a power control unit (PCU).
 20. The method of claim 5further comprises: increasing the power supply level, according to theoutput signal, when the operating temperature is in the region of RTD bya power control unit (PCU).
 21. An apparatus comprising: a plurality offirst sensors to determine corresponding operating temperatures of aplurality of hardware processor cores of a processor; a plurality ofsecond sensors to determine corresponding behaviors of the plurality ofhardware processor cores; and a control unit to determine: eachfrequency of a plurality of clock signals used by the plurality ofhardware processor cores, and each power supply level for the pluralityof hardware processor cores, wherein the control unit to determine eachfrequency and power supply level according to the determinedcorresponding temperatures and behaviors of the plurality of hardwareprocessor cores.
 22. The apparatus of claim 21, wherein the plurality ofsecond sensors is one of: a plurality of replica core behavior sensors,or a plurality of in-situ timing warning sensors.
 23. The apparatus ofclaim 22, wherein each of the replica core behavior sensor from theplurality of second sensors comprises: a ring oscillator to generate afirst signal having a first frequency, the ring oscillator operable tomimic actual temperature dependence of one of the hardware processorcores of the processor.
 24. The apparatus of claim 23, wherein each ofthe replica core behavior sensor from the plurality of second sensorsfurther comprises: a first counter to generate a first countcorresponding to the first frequency; a second counter to generate asecond count corresponding to the frequency of the clock signal of oneof the hardware processor cores of the processor; and a comparator,coupled to the first and second counters, to compare the first andsecond counts and to generate an output signal indicating the behaviorof one of the hardware processor cores of the processor.